HIGH-FIELD RESONANT MAGNETOTRANSPORT MEASUREMENTS IN SMALL N+NN+ GAAS STRUCTURES - EVIDENCE FOR ELECTRIC-FIELD-INDUCED ELASTIC INTER-LANDAU-LEVEL SCATTERING
HIGH-FIELD RESONANT MAGNETOTRANSPORT MEASUREMENTS IN SMALL N+NN+ GAAS STRUCTURES - EVIDENCE FOR ELECTRIC-FIELD-INDUCED ELASTIC INTER-LANDAU-LEVEL SCATTERING
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DOI：
10.1103/physrevlett.53.608
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发表时间：
1984-01-01
影响因子：
8.6
通讯作者：
HILL, G
中科院分区：
文献类型：
--
作者：
EAVES, L;GUIMARAES, PSS;HILL, G
在薄的（1 ~ 9 μm） n+ n+ GaAs结构中，高电场下的磁声子共振揭示了一种新的磁导机制，其中第n朗道能级的电子可以弹性或准弹性地散射到（n+ 1）能级。
Magnetophonon resonance at high electric fields in thin (1 to 9 μm) n+ n n+ GaAs structures reveals a new mechanism of magnetoconduction, in which an electron in the n th Landau level can scatter elastically or quasielastically into the (n+ 1) th level.