Electrical properties of amorphous-Al2O3/single-crystal ZnO heterointerfaces
Electrical properties of amorphous-Al2O3/single-crystal ZnO heterointerfaces
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DOI：
10.1063/1.4826538
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发表时间：
2013-10
影响因子：
4
通讯作者：
J. Liu;A. Kobayashi;J. Ohta;H. Fujioka;M. Oshima
中科院分区：
文献类型：
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作者：
J. Liu;A. Kobayashi;J. Ohta;H. Fujioka;M. Oshima
研究了Al/Al2O3/ZnO（0001¯）和Al/Al2O3/ZnO（0001）金属绝缘体半导体（MIS）二极管的电学性能。它们的电容电压曲线表明，Al/Al2O3/ZnO（0001¯）MIS二极管的固定电荷密度和捕获电荷密度低于Al/Al2O3/ZnO（0001）二极管。x射线光电子能谱显示，高质量Al2O3/ZnO（0001¯）异质界面的价带偏移为1.2±0.2 eV。这些结果表明，Al2O3/ZnO（0001¯）异质界面可以被认为是制造ZnO基场效应晶体管的合适组合。
Electrical properties of Al/Al2O3/ZnO (0001¯) and Al/Al2O3/ZnO (0001) metal-insulator-semiconductor (MIS) diodes have been investigated. The capacitance-voltage curves of them suggest that there are lower fixed and trapped charge densities for the Al/Al2O3/ZnO (0001¯) MIS diode than those for the Al/Al2O3/ZnO (0001) one. X-ray photoelectron spectroscopy has revealed that the valence band offset of the high-quality Al2O3/ZnO (0001¯) heterointerface is 1.2 ± 0.2 eV. These findings indicate that the Al2O3/ZnO (0001¯) heterointerface can be regarded as a suitable combination for the fabrication of ZnO-based field effect transistors.