Graphene phonon softening and splitting by directional straining
Graphene phonon softening and splitting by directional straining
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DOI：
10.1063/1.4935604
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发表时间：
2015-11
影响因子：
4
通讯作者：
X. X. Yang-X.;Y. Wang;J. Li;W. Liao;Y. H. Liu;Changyong Sun
中科院分区：
文献类型：
--
作者：
X. X. Yang-X.;Y. Wang;J. Li;W. Liao;Y. H. Liu;Changyong Sun
应变诱导的石墨烯声子软化和声子带分裂确实很有趣，这归因于声子双共振散射，而不涉及C-C键弛豫。在这里，我们表明，延长和削弱的C-C键软化的声子和单轴应变和C3 v键的几何形状之间的失配分裂带。除了石墨烯中C-C键的力常数为11.8 N/m之外，理论和测量之间的一致性得出，如果应变沿着键，则发生最大带分裂;如果应变垂直，则不发生带分裂。
Strain-induced graphene phonon softening and phonon band splitting are indeed fascinating, which were attributed to the phonon double resonant scattering without intrinsic involvement of C-C bond relaxation. Here, we show that the lengthening and weakening of the C-C bond softens the phonon and that the mismatching between the uniaxial strain and the C3v bond geometry splits the band. In addition to the force constant of 11.8 N/m for a C-C bond in graphene, consistency between theory and measurements derives that if the strain is along a bond, maximal band splitting happens; if the strain is perpendicular, no band splitting occurs.