X-ray detection efficiency of a silicon surface barrier detector using synchrotron radiation in the 0.06–0.9 keV energy region
X-ray detection efficiency of a silicon surface barrier detector using synchrotron radiation in the 0.06–0.9 keV energy region
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使用同步辐射的硅表面势垒探测器在 0.06–0.9 keV 能量区域的 X 射线探测效率
DOI：
10.1016/0168-9002(90)90275-b
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发表时间：
1990
影响因子：
1.4
通讯作者：
A. Yagishita
中科院分区：
文献类型：
--
作者：
T. Cho;M. Hirata;E. Takahashi;N. Yamaguchi;T. Kondoh;S. Miyoshi;S. Aoki;H. Maezawa;A. Yagishita
利用0.056~0.900 keV的同步辐射，对硅表面势垒探测器的探测效率进行了测试。ηSSB，已被调查。利用耗尽层、死层和电极的探测器参数，将实验数据与理论计算结果进行了比较。总体上，除了0.07-0.17keV范围内的振荡结构外，数据点与理论结果吻合得很好。在该能区，在Al-Li和Al-Li吸收边附近以及Al-Li边附近观察到ηSSB中的锐边结构。特别是，在Al LiEdge附近的ηSSB中，这种结构伴随着类似于边缘高能一侧的X射线吸收近边结构(XANES)的振荡行为。
Using synchrotron radiation from 0.056 to 0.900 keV, the detection efficiency of a silicon surface barrier (SSB) detector. ηSSB, has been investigated. The experimental data are compared with the theoretically calculated results using the detector parameters of the depletion layer, the dead layer and the electrode. As a whole, the data points agree well with the theoretical results except for an oscillatory structure for the 0.07–0.17 keV region. In this energy region, sharp edge structures in ηSSBare observed near the Al LIIand LIIIabsorption edges as well as the Al LIedge. In particular, this structure in ηSSBnear the Al LIedge is accompanied by an oscillatory behaviour like an X-ray absorption near-edge structure (XANES) on the high energy side of the edge.