MEMS-tunable vertical-cavity SOAs

MEMS-tunable vertical-cavity SOAs
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DOI:
10.1109/jqe.2004.841496
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发表时间:
2005-03-01
影响因子:
2.5
通讯作者:
Bowers, JE
Bowers, JE
中科院分区:
工程技术3区
文献类型:
--
作者:
Cole, GD;Björlin, ES;Bowers, JE

文献摘要

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我们提出的信号增益,波长调谐特性,饱和特性,和噪声系数(NF)的MEMS为基础的广泛可调谐的垂直腔半导体光放大器(VCSOA)的各种光学腔设计,我们比较的理论结果产生的数据从一些实验设备。使用一般的法布里-珀罗关系,它是可能的模型的波长调谐特性和可调谐垂直腔放大器的峰值信号增益,而速率方程分析用于描述饱和输出功率和NF作为VCSOA谐振波长的函数。此外,集成静电驱动器的基本设计原则进行了概述。据发现,MEMS可调谐VCSOA遵循许多相同的设计趋势,作为固定波长的设备。然而,对于可调谐器件,与基于MEMS的调谐机制相关联的变化的反射镜反射率和变化的单程增益的影响导致在器件的波长跨度上改变放大器特性。
We present the signal gain, wavelength tuning characteristics, saturation properties, and noise figure (NF) of MEMS-based widely tunable vertical-cavity semiconductor optical amplifiers (VCSOAs) for various optical cavity designs, and we compare the theoretical results to data generated from a number of experimental devices. Using general Fabry-Perot relationships, it is possible to model both the wavelength tuning characteristics and the peak signal gain of tunable vertical-cavity amplifiers, while a rate-equation analysis is used to describe the saturation output power and NF as a function of the VCSOA resonant wavelength. Additionally, the basic design principles for an integrated electrostatic actuator are outlined. It is found that MEMS-tunable VCSOAs follow many of the same design trends as fixed-wavelength devices. However, with tunable devices, the effects of varying mirror reflectance and varying single-pass gain associated with the MEMS-based tuning mechanism lead to changing amplifier properties over the wavelength span of the device.