Ta Doping Enhanced Room-Temperature Ferromagnetism in 2D Semiconducting MoTe2 Nanosheets
Ta Doping Enhanced Room-Temperature Ferromagnetism in 2D Semiconducting MoTe2 Nanosheets
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Ta 掺杂增强了二维半导体 MoTe2 纳米片的室温铁磁性
DOI：
10.1002/aelm.201900552
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发表时间：
2019
影响因子：
6.2
通讯作者：
Chang Haixin
中科院分区：
文献类型：
--
作者：
Yang Li;Wu Hao;Zhang Wenfeng;Lou Xun;Xie Zijian;Yu Xu;Liu Yuan;Chang Haixin
室温铁磁半导体仍然是几十年来最令人困惑的问题之一。目前，二维铁磁过渡金属二硫族化合物（TMDCs）纳米片由于其独特的电子结构和性能而引起了人们的持续关注。本文发现，半导体2H相MoTe2few/单层混合纳米片具有室温铁磁性，居里温度高于400 K，而MoTe2bulk则具有抗磁性。这种室温铁磁性的起源归因于其结构缺陷的组合，包括Te空位、无序、非晶缺陷和由降维引起的边缘状态。此外，在室温下，非磁性Ta掺杂策略明显增强了铁磁性能。这种结构缺陷和边缘态调制铁磁性为寻找更坚固的室温铁磁TMDCs纳米片提供了一种可行的策略，这对于探索新型电子和自旋电子器件至关重要，其中载流子电荷和自旋自由都可以控制。
Room temperature ferromagnetic semiconductors remain one of the most puzzling issues to be solved in tens of years. Nowadays, 2D ferromagnetic transition metal dichalcogenides (TMDCs) nanosheets attract continuous interest due to their exceptional electronic structure and properties. Here, it is identified that semiconducting 2H‐phase MoTe2few/mono‐layer mixed nanosheets present a room temperature ferromagnetic property with Curie temperature above 400 K, although the MoTe2bulk counterpart shows diamagnetic properties. The origin of such observed room temperature ferromagnetism is attributed to the combination of their structural defects including Te vacancies, disorders, and amorphous imperfections and edge‐states caused by reduced dimensionality. Moreover, a distinct enhancement of ferromagnetic properties at room temperature is revealed by a non‐magnetic Ta doping strategy. Such structural defects and edge‐states modulated ferromagnetism offers a feasible strategy to search for more robust room temperature ferromagnetic TMDCs nanosheets, which is essential to explore novel electronic and spintronic devices where both carrier charge and spin freedom can be controlled.