From the Casimir Limit to Phononic Crystals: 20 Years of Phonon Transport Studies Using Silicon-on-Insulator Technology
From the Casimir Limit to Phononic Crystals: 20 Years of Phonon Transport Studies Using Silicon-on-Insulator Technology
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DOI：
10.1115/1.4023577
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发表时间：
2013-06-01
影响因子：
--
通讯作者：
Goodson, Kenneth E.
中科院分区：
文献类型：
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作者：
Marconnet, Amy M.;Asheghi, Mehdi;Goodson, Kenneth E.
绝缘体上硅（SOI）技术推动了半导体和微机电系统（MEMS）制造的进步，并通过提供厚度低至几十纳米的单晶硅层，彻底改变了我们研究声子输运现象的能力。这些近乎完美的晶体硅层是研究弹道声子输运以及边界散射与包括杂质和周期性孔隙在内的其他机制耦合的理想平台。早期研究表明，在厚度低至20纳米的薄膜中，由于声子边界散射，热传导存在明显的尺寸效应，并且首次在室温下提供了卡西米尔极限令人信服的证据。最近对超薄膜和周期性多孔薄膜的研究正在探索在受限几何结构和多孔薄膜中声子色散改变的可能性。
Silicon-on-insulator (SOI) technology has sparked advances in semiconductor and MEMs manufacturing and revolutionized our ability to study phonon transport phenomena by providing single-crystal silicon layers with thickness down to a few tens of nanometers. These nearly perfect crystalline silicon layers are an ideal platform for studying ballistic phonon transport and the coupling of boundary scattering with other mechanisms, including impurities and periodic pores. Early studies showed clear evidence of the size effect on thermal conduction due to phonon boundary scattering in films down to 20 nm thick and provided the first compelling room temperature evidence for the Casimir limit at room temperature. More recent studies on ultrathin films and periodically porous thin films are exploring the possibility of phonon dispersion modifications in confined geometries and porous films.