Injection and controlled motion of conducting domain walls in improper ferroelectric Cu-Cl boracite.
Injection and controlled motion of conducting domain walls in improper ferroelectric Cu-Cl boracite.
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DOI：
10.1038/ncomms15105
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发表时间：
2017-05-16
影响因子：
16.6
通讯作者：
Gregg JM
中科院分区：
文献类型：
--
作者：
McQuaid RGP;Campbell MP;Whatmore RW;Kumar A;Gregg JM
铁电畴壁是一类全新的片状功能材料。此外，由于畴壁通常是可写、可擦除和可移动的，它们在功能灵活的设备中可能很有用：例如，创建和移动导电壁可以在新形式的可重构纳米电路中建立或断开电气连接。然而，存在着重大的挑战：表现出强大导电性的特定位置的平面壁注入和湮灭并不容易实现。本文报道了在非铁电Cu3B7O13Cl中带电畴壁的观察、机械书写和控制运动。壁是直的，几十微米长，是特定区域对之间弹性相容条件的结果。我们表明，通过局部施加点应力可以实现长达数百微米的导电壁的特定位置注入，并且一旦创建，它们可以使用施加的电场移动和重新定位。导电铁电畴壁是一类新型的功能材料，但如何实现特定位置的注入和湮灭是一个挑战。在这里，McQuaid等人报道了局部点应力产生并由电场控制的Cu3B7O13Cl中这种壁的特定部位注射。
Ferroelectric domain walls constitute a completely new class of sheet-like functional material. Moreover, since domain walls are generally writable, erasable and mobile, they could be useful in functionally agile devices: for example, creating and moving conducting walls could make or break electrical connections in new forms of reconfigurable nanocircuitry. However, significant challenges exist: site-specific injection and annihilation of planar walls, which show robust conductivity, has not been easy to achieve. Here, we report the observation, mechanical writing and controlled movement of charged conducting domain walls in the improper-ferroelectric Cu3B7O13Cl. Walls are straight, tens of microns long and exist as a consequence of elastic compatibility conditions between specific domain pairs. We show that site-specific injection of conducting walls of up to hundreds of microns in length can be achieved through locally applied point-stress and, once created, that they can be moved and repositioned using applied electric fields. Conducting ferroelectric domain walls constitute a new class of functional material, but to achieve site-specific injection and annihilation of such walls is challenging. Here, McQuaid et al. report site-specific injection of such walls in Cu3B7O13Cl created by local point-stress and controlled by electric field.