High-purity semi-insulating 4H-SiC grown by the seeded-sublimation method
High-purity semi-insulating 4H-SiC grown by the seeded-sublimation method
复制标题
采用晶种升华法生长的高纯半绝缘 4H-SiC
DOI：
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发表时间：
2002
期刊：
影响因子：
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通讯作者：
C. Carter
中科院分区：
文献类型：
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作者：
J. R. Jenny;S. Müller;A. Powell;V. Tsvetkov;H. Hobgood;R. Glass;C. Carter
采用籽晶升华法生长了高纯半绝缘4 H-SiC晶体。这些半绝缘（SI）晶体（直径2英寸）在没有故意引入元素深能级掺杂剂（如钒）的情况下生产，从这些晶体切割的晶片具有大于109 Ωcm的室温折射率。基于温度依赖的电阻率测量，SI行为的特征在于从0.9-1.5 eV范围内的几个激活能。二次离子质谱（西姆斯）和电子顺磁共振（EPR）的数据表明，SI行为起源于与本征点缺陷相关的深能级。晶片的典型微管密度在30 cm-2和150 cm-2之间。这种材料的室温热导率接近4 H-SiC的理论最大值5 W/m K，使这些晶片适用于高功率微波应用。
The growth of high-purity, semi-insulating (HPSI) 4H-SiC crystals has been achieved using the seeded-sublimation growth technique. These semi-insulating (SI) crystals (2-inch diameter) were produced without the intentional introduction of elemental deep-level dopants, such as vanadium, and wafers cut from these crystals possess room-temperature resistivities greater than 109 Ωcm. Based upon temperature-dependent resistivity measurements, the SI behavior is characterized by several activation energies ranging from 0.9–1.5 eV. Secondary ion mass spectroscopy (SIMS) and electron paramagnetic resonance (EPR) data suggest that the SI behavior originates from deep levels associated with intrinsic point defects. Typical micropipe densities for wafers were between 30 cm−2 and 150 cm−2. The room-temperature thermal conductivity of this material is near the theoretical maximum of 5 W/m K for 4H-SiC, making these wafers suitable for high-power microwave applications.