Superconductivity in diamond thin films well above liquid helium temperature
Superconductivity in diamond thin films well above liquid helium temperature
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DOI：
10.1063/1.1802389
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发表时间：
2004-06
影响因子：
4
通讯作者：
Y. Takano;M. Nagao;K. Kobayashi;H. Umezawa;I. Sakaguchi;M. Tachiki;T. Hatano;H. Kawarada
中科院分区：
文献类型：
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作者：
Y. Takano;M. Nagao;K. Kobayashi;H. Umezawa;I. Sakaguchi;M. Tachiki;T. Hatano;H. Kawarada
我们报告明确的证据超导性的重掺杂硼的金刚石薄膜生长的微波等离子体辅助化学气相沉积（MPCVD）。MPCVD沉积的金刚石的优点是它可以含有高浓度的硼，特别是在（111）取向的膜中。超导转变温度由运输测量确定为7.4 K TC发病和4.2 K零电阻。上临界场估计为7T。磁化强度作为磁场的函数，表现出典型的II型超导性质。
We report unambiguous evidence for superconductivity in a heavily boron-doped diamond thin film grown by microwave plasma-assisted chemical vapor deposition (MPCVD). An advantage of the MPCVD-deposited diamond is that it can contain boron at high concentration, especially in (111)-oriented films. Superconducting transition temperatures are determined by transport measurements to be 7.4 K for TC onset and 4.2 K for zero resistance. The upper critical field is estimated to be 7 T. Magnetization as a function of magnetic fields shows typical type-II superconducting properties.