Reduction of charge-center scattering rate in Hg1-xFexSe.
Reduction of charge-center scattering rate in Hg1-xFexSe.
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Hg1-xFexSe 中电荷中心散射率的降低。
DOI：
10.1103/physrevb.35.3900
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发表时间：
1987
期刊：
影响因子：
--
通讯作者：
Reifenberger
中科院分区：
文献类型：
--
作者：
Pool;Kossut;Debska;Reifenberger
报道了Hg1−xFexSe在4.2K和0.0001<；x<；0.12K下的电阻率、电子浓度和迁移率。这些数据是在电子能带结构模型中解释的，该模型假设存在共振施主(由于铁离子的存在)，其基态能量与导带连续体一致。电子浓度数据能够确定施主能量作为温度和晶体组成的函数。∼0.0003≤x≤的低温电子迁移率出人意料地高，表明在这些温度下带电杂质散射率降低。这种效应可以用与铁有关的杂质体系中电荷的空间有序来解释。
The electrical resistivity, electron concentration, and mobility of Hg 1− x Fe x Se are reported for 4.2< T< 300 K and for 0.0001< x< 0.12. The data are interpreted within an electronic band-structure model that assumes the existence of resonant donors (due to the presence of Fe ions) whose ground-state energy coincides with the conduction-band continuum. The electron-concentration data enable determination of the donor energy as a function of the temperature and crystal composition. Unexpectedly high values of the low-temperature electron mobility for∼ 0.0003≤ x≤ 0.01 indicate a reduction of the charged-impurity scattering rate at these temperatures. This effect is interpreted in terms of a spatial ordering of charges within the Fe-related impurity system.