Low-contact-resistance and smooth-surface Ti∕Al∕Nb∕Au ohmic electrode on AlGaN∕GaN heterostructure
Low-contact-resistance and smooth-surface Ti∕Al∕Nb∕Au ohmic electrode on AlGaN∕GaN heterostructure
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AlGaN∕GaN异质结构上的低接触电阻和光滑表面Ti∕Al∕Nb∕Au欧姆电极
DOI：
10.1063/1.1810210
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发表时间：
2004
期刊：
影响因子：
--
通讯作者：
M. Kuzuhara
中科院分区：
文献类型：
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作者：
T. Nakayama;H. Miyamoto;Y. Ando;Y. Okamoto;T. Inoue;K. Hataya;M. Kuzuhara
通过使用在 Al0.3Ga0.7N∕GaN 异质结构上形成的 Ti∕Al∕Nb∕Au，我们实现了低接触电阻和光滑的表面形貌。在 830 至 1000°C 的宽范围退火温度和 10 至 300 秒的退火时间的热处理后，可重复记录小于 0.6Ω/mm 的低接触电阻。结果发现，在研究的所有退火条件下均获得了低于 35nm 的均方根表面粗糙度。考虑到表面粗糙度和再现性，最合适的退火条件是850℃，100s，其接触电阻和比接触电阻率分别为0.48Ω∕mm和5×10−6Ω∕cm2。
We have achieved both low contact resistance and smooth surface morphology by using Ti∕Al∕Nb∕Au formed on an Al0.3Ga0.7N∕GaN heterostructure. A low contact resistance of less than 0.6Ω∕mm was reproducibly recorded after thermal treatment with a wide range of annealing temperature from 830 to 1000°C and annealing time from 10 to 300s. It was found that root-mean square surface roughness of under 35nm was obtained with all the annealing conditions investigated. In consideration of surface roughness and reproducibility, the most suitable annealing condition was 850°C for 100s, which leads to a contact resistance and a specific contact resistivity of 0.48Ω∕mm and 5×10−6Ω∕cm2, respectively.