Sensitizing Eu3+ with Ce3+ and Tb3+ to Make Narrow-Line Red Phosphors for Light Emitting Diodes
Sensitizing Eu3+ with Ce3+ and Tb3+ to Make Narrow-Line Red Phosphors for Light Emitting Diodes
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DOI：
10.1149/2.022206esl
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发表时间：
2012
影响因子：
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通讯作者：
A. Setlur
中科院分区：
文献类型：
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作者：
A. Setlur
开发高效的窄线发射材料是发光二极管（LED）系统中磷光体开发的一个目标。本文描述了Ce 3+→（Tb 3+）n→ Eu 3+的能量转移过程，该过程使Eu 3+ 7 F0 → 5DJ线发射被近紫外和紫光谱区的Ce 3+ 4f 1→ 5d 1吸收跃迁敏化。这种能量转移过程在YBO 3：Ce，Tb，Eu粉末中得到了证实，从而产生了可以被短波长InGaN LED激发的线发射红色荧光粉。未经优化的YBO 3：Ce，Tb，Eu粉末样品的量子效率可为YBO 3：Ce，Tb或YBO 3：Ce样品的65%。使用这种能量转移过程的荧光粉的限制进行了讨论。
The development of efficient, narrow-line emitting materials is one goal for phosphor development in light emitting diode (LED) systems. This Letter describes the Ce 3+→(Tb 3+) n→ Eu 3+ energy transfer process that enables Eu 3+ 7 F 0→ 5 D J line emission to be sensitized by the allowed Ce 3+ 4f 1→ 5d 1 absorption transition in near-UV and violet spectral regions. This energy transfer process is demonstrated in YBO 3: Ce, Tb, Eu powders, leading to line-emitting red phosphors that can be excited by short-wavelength InGaN LEDs. The quantum efficiency of unoptimized YBO 3: Ce, Tb, Eu powder samples can be 65% of YBO 3: Ce, Tb or YBO 3: Ce samples. Limitations for phosphors that use this energy transfer process are discussed.