Morphology of germanium nanowires grown in presence of B2H6
Morphology of germanium nanowires grown in presence of B2H6
复制标题
B2H6 中生长的锗纳米线的形态
DOI：
10.1063/1.2165089
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发表时间：
2006
影响因子：
4
通讯作者：
J. Chu
中科院分区：
文献类型：
--
作者：
E. Tutuc;S. Guha;J. Chu
We study the Au-catalyzed chemical vapor growth of germanium (Ge) nanowires in the presence of di-borane (B2H6), serving as doping precursor. Our experiments reveal that, while undoped Ge nanowires can be grown epitaxially on Si(111) substrates with very long wire lengths, the B2H6 exposure renders the Ge nanowires significantly tapered. As we describe here, this peculiar morphology stems from the combination of the acicular, one-dimensional nanowire growth and a dramatically enhanced, B-induced conformal Ge deposition. The combination of acicular and conformal Ge growth mechanisms results in cone-shaped Ge nanostructures.
影响因子：
15
作者：
Wu, YY;Yang, PD
通讯作者：
Yang, PD