Improvement of emission efficiency of nanocrystalline silicon planar cathodes
Improvement of emission efficiency of nanocrystalline silicon planar cathodes
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DOI：
10.1116/1.2839886
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发表时间：
2008-03-01
影响因子：
1.4
通讯作者：
Takai, Mikio
中科院分区：
文献类型：
--
作者：
Shimawaki, Hidetaka;Neo, Yochiro;Takai, Mikio
制备了一种基于纳米晶Si的平面阴极，并对其发射特性进行了研究。在高于Au栅功函数的栅压下发生电子发射，通过减小Au电极的厚度，发射效率提高了4%.在Au薄膜中观察到大量的纳米孔，表明发射包括纳米孔下排列的纳米晶直接发射的电子。本文还讨论了发射电子的能量分布和阴极的发射角。(c)2008年美国真空学会。
A planar cathode based on nanocrystalline Si covered with a thin oxide film was fabricated and the emission characteristics were examined. The electron emission occurred at the gate voltage higher than the work function of the Au gate, and the emission efficiency was improved up to 4% by reducing the thickness of the Au electrode. A lot of nanoholes in the thin Au film were observed, suggesting emission included electrons directly emitted from nanocrystalline aligned under nanoholes. The energy distribution of the emitted electron and the emission angle of the cathode are also discussed. (c) 2008 American Vacuum Society.