Limits on Charge Carrier Mobility in Suspended Graphene due to Flexural Phonons
Limits on Charge Carrier Mobility in Suspended Graphene due to Flexural Phonons
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DOI：
10.1103/physrevlett.105.266601
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发表时间：
2010-12-22
影响因子：
8.6
通讯作者：
Guinea, F.
中科院分区：
文献类型：
--
作者：
Castro, Eduardo V.;Ochoa, H.;Guinea, F.
研究了悬浮石墨烯样品中迁移率的温度依赖性。在洁净样品中，当温度T大于或接近10 K时，弯曲声子成为主要的散射机制，电阻率随温度T呈二次方增加。在室温下，弯曲声子将本征迁移率限制在几个m（2）/Vs。它们的影响可以通过施加应变或将石墨烯放置在衬底上来消除。
The temperature dependence of the mobility in suspended graphene samples is investigated. In clean samples, flexural phonons become the leading scattering mechanism at temperature T greater than or similar to 10 K, and the resistivity increases quadratically with T. Flexural phonons limit the intrinsic mobility down to a few m(2)/Vs at room T. Their effect can be eliminated by applying strain or placing graphene on a substrate.