Monte Carlo exploration of neutron-induced SEU-sensitive volumes in SRAMs
Monte Carlo exploration of neutron-induced SEU-sensitive volumes in SRAMs
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SRAM 中中子诱导 SEU 敏感体积的蒙特卡罗探索
DOI：
10.1109/tns.2002.805420
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发表时间：
2002
影响因子：
1.8
通讯作者：
F. Sexton
中科院分区：
文献类型：
--
作者：
J. Palau;R. Wrobel;K. Castellani;M. Calvet;P. Dodd;F. Sexton
一个蒙特卡罗方法是用来获得统计信息的空间分布的影响，参与中子引起的软错误率（SER）的众多的二次离子。排序标准的发生的颠覆是来自于一个简化以前的工作全单元三维（3-D）SRAM器件模拟。因此节省的时间允许处理各种各样的轨道状况。敏感区域的形状和延伸进行了探索，并与二次离子的属性。详细的灵敏度与深度的敏感区域的变化，以及与这些轨道，导致不安的几何条件。
A Monte Carlo approach is used to obtain statistical information on the effect of the spatial distribution of the numerous secondary ions involved in neutron induced soft error rates (SER). The sorting criteria for the occurrence of upset are derived from a simplification of previous work on full-cell three-dimensional (3-D) SRAM device simulation. The time thus saved allows the treatment of a wide variety of track conditions. The shape and extension of the sensitive region is explored and correlated to the secondary ion properties. Details on the variations of the sensitivity with depth into the sensitive region as well as on the geometrical conditions associated with those tracks that cause upsets are given.