Engineering and Localization of Quantum Emitters in Large Hexagonal Boron Nitride Layers
Engineering and Localization of Quantum Emitters in Large Hexagonal Boron Nitride Layers
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DOI：
10.1021/acsami.6b09875
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发表时间：
2016-11-02
影响因子：
9.5
通讯作者：
Aharonovich, Igor
中科院分区：
文献类型：
--
作者：
Choi, Sumin;Toan Trong Tran;Aharonovich, Igor
六方氮化硼是一种宽带隙范德华材料，近年来作为量子光子学实验的一个有前途的平台而出现。在这项工作中，我们研究了六方氮化硼大薄片（宽达数十微米）中窄带量子发射体的形成和局域化。电子辐照或高温退火可激活六方氮化硼生长材料中的发射体，离子注入或聚焦激光辐照可提高发射体的形成概率。有趣的是，我们发现发射器总是定位在薄片的边缘，不像三维材料中的大多数发光点缺陷。我们的研究结果为六方氮化硼在纳米光子学中的应用迈出了重要的一步。
Hexagonal boron nitride is a wide-band-gap van der Waals material that has recently emerged as a promising platform for quantum photonics experiments. In this work, we study the formation and localization of narrowband quantum emitters in large flakes (up to tens of micrometers wide) of hexagonal boron nitride. The emitters can be activated in as-grown hexagonal boron nitride by electron irradiation or high-temperature annealing, and the emitter formation probability can be increased by ion implantation or focused laser irradiation of the as-grown material. Interestingly, we show that the emitters are always localized at the edges of the flakes, unlike most luminescent point defects in three-dimensional materials. Our results constitute an important step on the roadmap of deploying hexagonal boron nitride in nanophotonics applications.