Hafnium oxide/germanium oxynitride gate stacks on germanium: Capacitance scaling and interface state density
Hafnium oxide/germanium oxynitride gate stacks on germanium: Capacitance scaling and interface state density
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DOI：
10.1063/1.3116624
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发表时间：
2009-05-04
影响因子：
4
通讯作者：
McIntyre, Paul C.
中科院分区：
文献类型：
--
作者：
Oshima, Yasuhiro;Shandalov, Michael;McIntyre, Paul C.
研究了HfO(2)/GeO(X)N(Y)/Ge栅叠层中Ge的化学状态和电学性质关联，以了解它们的电容标度势。通过Ge(100)的氮化和HfO(2)的原子层沉积，我们得到了低界面态密度(D(It)接近3×10(11)cm(-2)eV(-1))和小电容当量氧化层厚度(CET)接近1.35 nm的栅叠层。GeO(X)N(Y)中的氮含量既影响上覆HfO(2)的晶体结构，也影响Ge向HfO(2)的扩散。形成气退火引入的Ge杂质与高k HfO(2)相的形成相一致，与CET还原一致。
The chemical state of Ge in HfO(2)/GeO(x)N(y)/Ge gate stacks and electrical property correlations are investigated to understand their capacitance scaling potential. We obtained gate stacks with low interface state density (D(it)similar to 3x10(11) cm(-2) eV(-1)) and a small capacitance equivalent oxide thickness (CET) of similar to 1.35 nm by nitridation of Ge (100) and atomic layer deposition of HfO(2). The nitrogen content of the GeO(x)N(y) affects both the crystalline structure of the overlying HfO(2) and Ge diffusion into the HfO(2). Introduction of Ge impurity by forming gas anneal coincided with the formation of a higher-k HfO(2) phase, consistent with CET reduction.