Thermal Decomposition of Tetrabromosilane and Deposition of Crystalline Silicon
Thermal Decomposition of Tetrabromosilane and Deposition of Crystalline Silicon
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四溴硅烷的热分解与晶体硅的沉积
DOI：
10.1016/j.mssp.2014.02.045
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发表时间：
2014
影响因子：
4.1
通讯作者：
Ryuichi Komatsu
中科院分区：
文献类型：
--
作者：
Masaharu Nakayama;Miyamoto Seiji;Takuro Ogawa;Shogo Osae;Kazuaki Tomono;Sumimoto Michinori;Yoshihisa Sakata;Ryuichi Komatsu
四溴硅烷（SiBr 4）的热解通过使气化的SiBr 4与氢气通过加热至低于1000 °C的基底来进行。然后将基材置于配备有流动系统的反应炉中，并分析含有反应物和产物的废气与温度的关系。SiBr 4在800 °C下开始分解，同时放出三溴硅烷（SiHBr 3），随后以晶体形式沉积硅。SiBr 4的转化率随反应温度的升高而增加。在不存在H2的情况下不发生反应。在类似条件下使用四氯硅烷（SiCl 4）的实验导致SiCl 4浓度在高于900 °C的温度下降低。这表明，SiBr 4的分解是积极有利的SiCl 4相比，从Ellingham图的Br-和Cl-含物种的反应预测。因此，由溴硅烷生产硅是使用SiHCl 3的方法（所谓的西门子方法）的替代方法，该方法是目前用于硅生产的主要技术。
Pyrolysis of tetrabromosilane (SiBr4) was carried out by passing vaporized SiBr4with hydrogen over a substrate heated to less than 1000 °C. The substrate was then placed in a reaction furnace equipped with a flow system and the exhaust gas containing the reactants and products was analyzed versus temperature. SiBr4began to decompose at 800 °C simultaneously with the evolution of tribromosilane (SiHBr3), which was followed by the deposition of silicon in a crystalline form. The conversion of SiBr4increased with increasing reaction temperature. No reaction occurred in the absence of H2. An experiment with tetrachlorosilane (SiCl4) under the similar conditions led to a decrease in SiCl4concentration at temperatures greater than 900 °C. This demonstrates that decomposition of SiBr4is energetically favorable compared to that of SiCl4, as predicted from the Ellingham diagrams for the reactions of Br- and Cl-containing species. Thus, Si production from bromosilanes is an alternative to the process using SiHCl3, the so-called Siemens method, which is the main technology for Si production currently.