Growth of MnGeP2 Thin Films by Molecular Beam Epitaxy
Growth of MnGeP2 Thin Films by Molecular Beam Epitaxy
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分子束外延生长 MnGeP2 薄膜
DOI：
10.1143/jjap.44.l265
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发表时间：
2005
期刊：
影响因子：
--
通讯作者：
Katsuaki Sato
中科院分区：
文献类型：
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作者：
K. Minami;J. Jogo;V. Smirnov;H. Yuasa;T. Nagatsuka;T. Ishibashi;Y. Morishita;Yuriko Matsuo;Y. Kangawa;A. Koukitu;Katsuaki Sato
研究了新型三元化合物MnGeP_2的外延生长。在生长实验之前，使用从头计算进行了理论研究，在此基础上预测了具有黄铜矿结构的MnGeP 2的稳定存在。采用分子束外延（MBE）技术在GaAs（001）和InP（001）衬底上进行了Mn-Ge-P的生长实验，其中Mn和Ge由固体源提供，P由叔丁基膦（TBP）气源提供。最佳生长条件已被估计的基础上的X-射线衍射研究。MnGeP 2的取向过生长由X射线衍射（XRD）分析上的倒易晶格映射（RLM）确认，并且基于该材料具有四方晶系晶体结构的假设，晶格常数已被确定为a=0.569 nm和c=1.13 nm。
Epitaxial growth of the Mn-containing novel ternary compound MnGeP2 has been investigated. Prior to the growth experiments, theoretical studies using an ab initio calculation were carried out, on the basis of which the stable existence of MnGeP2 with a chalcopyrite structure was predicted. Growth experiments of Mn-Ge-P were performed on GaAs(001) and InP(001) substrates using a molecular beam epitaxy (MBE) technique, in which Mn and Ge were supplied from solid sources and P from a tertiary butyl phosphine (TBP) gas source. The optimum growth condition has been estimated on the basis of X-ray diffraction studies. Oriented overgrowth of MnGeP2 was confirmed from a reciprocal lattice mapping (RLM) on X-ray diffraction (XRD) analyses, and lattice constants have been determined to be a=0.569 nm and c=1.13 nm based on the assumption that the material has a tetragonal crystal structure.