Crack healing in silicon carbide
Crack healing in silicon carbide
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DOI：
10.1111/j.1551-2916.2004.00490.x
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发表时间：
2004-03-01
影响因子：
3.9
通讯作者：
Yoon, DY
中科院分区：
文献类型：
--
作者：
Chu, MC;Cho, SJ;Yoon, DY
通过在碳化硅试样中引入裂纹并随后对试样进行热处理，研究了裂纹的愈合。据观察，裂纹愈合，大大增加了强度，通过填充由碳化硅的氧化产生的无定形二氧化硅。结果表明，裂纹内SiO2与周围碳化硅之间的热膨胀失配产生的残余应力对强度的提高起主要作用。我们的研究结果表明，一个简单的氧化热处理可以提高碳化硅元件的可靠性。
Crack healing in silicon carbide was investigated by introducing cracks into specimens and subsequently heat-treating the specimens. It was observed that cracks were healed, dramatically increasing the strength, by being filled with amorphous silica produced by the oxidation of silicon carbide. It was shown that the residual stress produced by the thermal expansion mismatch between silica within cracks and surrounding silicon carbide played a major role in the increase of the strength. Our results imply that a simple oxidation heat treatment can improve the reliability of silicon carbide components.