Evidence for formation of multi-quantum dots in hydrogenated graphene.
Evidence for formation of multi-quantum dots in hydrogenated graphene.
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DOI：
10.1186/1556-276x-7-459
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发表时间：
2012-08-16
影响因子：
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通讯作者：
Liang CT
中科院分区：
文献类型：
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作者：
Chuang C;Puddy RK;Connolly MR;Lo ST;Lin HD;Chen TM;Smith CG;Liang CT
我们报道了氢化单层石墨烯薄片中形成多量子点的实验证据。场效应晶体管结构器件的低温测量结果支持了多量子点的存在。色标图中所示的库仑阻塞钻石与库仑峰的数目一起显示出所谓的随机库仑阻塞的特征。对于多量子点的形成，一种可能的解释是，在未经热退火处理的单层石墨烯薄片上无意装饰了杂质和缺陷，这是迄今为止在原始石墨烯中没有观察到的。在氢等离子体曝光过程中，石墨烯多量子点在杂质和缺陷位置周围形成。
We report the experimental evidence for the formation of multi-quantum dots in a hydrogenated single-layer graphene flake. The existence of multi-quantum dots is supported by the low-temperature measurements on a field effect transistor structure device. The resulting Coulomb blockade diamonds shown in the color scale plot together with the number of Coulomb peaks exhibit the characteristics of the so-called ‘stochastic Coulomb blockade’. A possible explanation for the formation of the multi-quantum dots, which is not observed in pristine graphene to date, was attributed to the impurities and defects unintentionally decorated on a single-layer graphene flake which was not treated with the thermal annealing process. Graphene multi-quantum dots developed around impurities and defect sites during the hydrogen plasma exposure process.