TCAD Simulation Models, Parameters, and Methodologies for β-Ga 2 O 3 Power Devices
TCAD Simulation Models, Parameters, and Methodologies for β-Ga 2 O 3 Power Devices
复制标题
β-Ga 2 O 3 功率器件的 TCAD 仿真模型、参数和方法
DOI：
10.1149/2162-8777/accfbe
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发表时间：
2023
影响因子：
2.2
通讯作者：
Wong, Hiu Yung
中科院分区：
文献类型：
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作者：
Wong, Hiu Yung
β-Ga 2 O 3 是一种新兴材料，由于其超宽带隙 (UWBG) 以及与碳化硅和氮化镓相比较低的原生衬底成本，有可能彻底改变电力电子技术。由于β-Ga 2 O 3 技术尚不成熟，β-Ga 2 O 3 的实验研究难度大且成本高。因此，技术计算机辅助设计（TCAD）是研究 β-Ga 2 O 3 器件的潜力和局限性的一种经济有效的方法。本文提出了根据实验校准的 TCAD 参数。它们用于执行异质结 p-NiO/n-Ga 2 O 3 二极管、肖特基二极管和常断 Ga 2 O 3 垂直 FinFET 的仿真。除了电流-电压 (IV) 仿真之外，还讨论了具有稳健设置的击穿、电容-电压 (CV) 和短路耐用性仿真。模拟中使用了 TCAD Sentaurus，但该方法可以轻松应用于其他模拟器。这为使用 TCAD 对 β-Ga 2 O 3 器件进行整体研究铺平了道路。
β-Ga 2 O 3 is an emerging material and has the potential to revolutionize power electronics due to its ultra-wide-bandgap (UWBG) and lower native substrate cost compared to Silicon Carbide and Gallium Nitride. Since β-Ga 2 O 3 technology is still not mature, experimental study of β-Ga 2 O 3 is difficult and expensive. Technology-Computer-Aided Design (TCAD) is thus a cost-effective way to study the potentials and limitations of β-Ga 2 O 3 devices. In this paper, TCAD parameters calibrated to experiments are presented. They are used to perform the simulations in heterojunction p-NiO/n-Ga 2 O 3 diode, Schottky diode, and normally-off Ga 2 O 3 vertical FinFET. Besides the current-voltage (IV) simulations, breakdown, capacitance-voltage (CV), and short-circuit ruggedness simulations with robust setups are discussed. TCAD Sentaurus is used in the simulations but the methodologies can be applied in other simulators easily. This paves the road to performing a holistic study of β-Ga 2 O 3 devices using TCAD.