A Compact F-band Filter Based on SiC Substrate-integrated Waveguides
A Compact F-band Filter Based on SiC Substrate-integrated Waveguides
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DOI：
10.1109/apmc57107.2023.10439892
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发表时间：
2023-12
期刊：
影响因子：
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通讯作者：
Xiaopeng Wang;M. J. Asadi;Lei Li;Tianze Li;James C. M. Hwang;F. Thome;Peter Brückner;D. Schwantuschke
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文献类型：
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作者：
Xiaopeng Wang;M. J. Asadi;Lei Li;Tianze Li;James C. M. Hwang;F. Thome;Peter Brückner;D. Schwantuschke
F波段基片集成波导（SIV）的设计，制造和表征的SiC晶片上，沿着与基片集成波导的滤波器，阻抗标准，并过渡到接地共面波导（GCPV）。GCPW-SIW过渡不仅便于晶片探测，而且还兼作谐振器，与SIW谐振器一起形成3极点带通滤波器。滤波器在115 GHz处的插入损耗为1.5 dB，回波损耗为34 dB，带宽为19 GHz（16%）。滤波器的尺寸仅为包括三个SIW谐振器的先前滤波器的63%。这些结果表明，在110 GHz以上的单芯片RF前端中单片集成高质量滤波器、高效率天线和放大器是可行的，这对6 G无线通信和下一代汽车雷达特别有利。
F-band substrate-integrated waveguides (SIVs) are designed, fabricated, and characterized on a SiC wafer, along with SIW-based filters, impedance standards, and transitions to grounded coplanar waveguides (GCPVs). The GCPW-SIW transitions not only facilitate wafer probing, but also double as resonators to form a 3-pole band-pass filter together with an SIW resonator. The resulted filter exhibits a 1.5-dB insertion loss at 115 GHz with a 34-dB return loss and a 19-GHz(16%) 3-dB bandwidth. The size of the filter is only 63% of previous filters comprising three SIW resonators. These results show the feasibility for monolithic integration of high-quality filters with high-efficiency antennas and amplifiers in a single-chip RF frontend above 110 GHz, which is particularly advantageous for 6G wireless communications and next-generation automobile radars.