Interconnection and electromigration scaling theory
Interconnection and electromigration scaling theory
复制标题
互连和电迁移缩放理论
DOI：
--
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发表时间：
1987
影响因子：
3.1
通讯作者：
K. Saraswat
中科院分区：
文献类型：
--
作者：
D. Gardner;J. Meindl;K. Saraswat
互连将成为亚微米尺寸性能和可靠性的限制。长距离互连是使用基于电阻率的模型来定义的，并且发现超过一半的互连将在 0.5 µm 特征尺寸下被归类为此类。因此，电阻率更低的材料的电阻率将变得很重要。提出了一种用于分析互连材料使用趋势和预测设计规则的模型。电迁移是远离电阻率最低的硅兼容材料（即铝）的驱动力。然而，黄金等替代品存在技术问题，并且难熔金属的电阻率对于大部分互连来说太高。分层结构是解决电迁移和小丘问题的一种可能的解决方案。
Interconnections will become the limit in performance and reliability at submicrometer dimensions. Long-distance interconnections are defined using models based on resistivity, and it is found that more than half of the interconnections will become categorized as such at 0.5-µm feature sizes. The resistivity of even less resistive materials, therefore, will become important. A model for analyzing the trends of material usage for interconnections and for projecting design rules is presented. Electromigration is the driving force away from the lowest resistivity silicon compatible material, namely aluminum. Replacements such as gold, however, have technological problems and the resistivity of refractory metals will be too high for a large fraction of the interconnections. Layered structures are one possible solution to the problems of electromigration and hillocks.