Post-deposition atomic terraces growth of ZnO thin films deposited on epi-GaN templates
Post-deposition atomic terraces growth of ZnO thin films deposited on epi-GaN templates
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DOI：
10.1016/j.apsusc.2007.05.059
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发表时间：
2007-09
影响因子：
6.7
通讯作者：
T. Okato;Tatsunori Sakano;M. Obara;M. Kappers;M. Blamire
中科院分区：
文献类型：
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作者：
T. Okato;Tatsunori Sakano;M. Obara;M. Kappers;M. Blamire
我们展示了生长过程对氧化锌薄膜性能的影响，这对于防止缺陷的形成以合成可重复的高质量的氧化锌薄膜是必不可少的指导。首先，我们揭示了低温沉积对于将GaN原子平台转移到表面是必不可少的。然而，随着薄膜厚度的增加，梯田消失，形成岛状形态。研究发现，经过适当的热处理后，厚膜表面光滑到可以看到原子阶梯的程度。随后证明了与较高的退火温度相关的不利影响，表现为裂纹的形成、黄色阴极发光的增强和界面处的混合。
We demonstrate how growth processes affect on ZnO film properties, which are to be essential guides to prevent defect formation in order to synthesize reproducible high quality ZnO films. First, we reveal that deposition at a low temperature is indispensable to transfer underlying GaN atomic terraces to ZnO surface. As the film thickness is increased, however, the terraces disappear to develop island morphology. It is found that the thick film surface is smoothed to the extent that atomic terraces can be seen after an appropriate thermal treatment. Adverse effects associated with high annealing temperatures are then demonstrated as evidenced by cracks formation, increased yellow cathode-luminescence and intermixing at the interface.