The growth of high mobility InGaAs and InAlAs layers by molecular beam epitaxy
The growth of high mobility InGaAs and InAlAs layers by molecular beam epitaxy
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通过分子束外延生长高迁移率 InGaAs 和 InAlAs 层
DOI：
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发表时间：
1986
期刊：
影响因子：
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通讯作者：
C. Fonstad
中科院分区：
文献类型：
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作者：
Wai;C. Fonstad
采用分子束外延（MBE）技术在（100）InP衬底上生长了InxGa1−xAs （x 0.53）和InyAl1−yAs （y 0.52）外延层，并利用x射线衍射和霍尔测量对其进行了表征。直接生长在InP衬底上的1.5 μm厚未掺杂InGaAs在300 K和77 K下的电子迁移率分别为11 400 cm2/ V s和47 500 cm2/ V s。这些无意掺杂层的背景载流子浓度通常在1015 cm−3的低范围内。在530℃下生长的未掺杂InAlAs层为n型。典型的2 μm厚层载流子浓度为7.5×1011 cm−2，室温下电子迁移率为1350 cm2/ V s。本工作获得的未掺杂InGaAs和InAlAs层的霍尔迁移率都是MBE所获得的最高的。这些层的良好质量归因于所采用的缓慢生长速度和生长环境的清洁度。
InxGa1−xAs (x≊0.53) and InyAl1−yAs (y≊0.52) epitaxial layers have been grown on (100) InP substrates by molecular beam epitaxy (MBE) and characterized using x‐ray diffraction and Hall measurements. Electron mobilities of 11 400 cm2/ V s at 300 K and 47 500 cm2/ V s at 77 K were measured on 1.5 μm thick undoped InGaAs grown directly on InP substrates. The background carrier concentrations of these unintentionally doped layers were typically in the low 1015 cm−3 range. Undoped InAlAs layers grown at 530 °C were n type. A typical 2 μm thick layer had a sheet carrier concentration of 7.5×1011 cm−2 and an electron mobility of 1350 cm2/ V s at room temperature. The Hall mobilities of both undoped InGaAs and InAlAs layers obtained in this work are among the highest ever obtained by MBE. The good quality of these layers is attributed to the slow growth rate employed and the cleanliness of the growth environment.