Atomic structure, energetics, and dynamics of topological solitons in indium chains on Si(111) surfaces.
Atomic structure, energetics, and dynamics of topological solitons in indium chains on Si(111) surfaces.
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DOI：
10.1103/physrevlett.106.026801
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发表时间：
2010-09
影响因子：
8.6
通讯作者：
Hui Zhang;Jin-Ho Choi;Yang Xu;Xiuxia Wang;X. Zhai;B. Wang;C. Zeng;Jun-Hyung Cho;Zhenyu Zhang;J. Hou
中科院分区：
文献类型：
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作者：
Hui Zhang;Jin-Ho Choi;Yang Xu;Xiuxia Wang;X. Zhai;B. Wang;C. Zeng;Jun-Hyung Cho;Zhenyu Zhang;J. Hou
基于扫描隧道显微镜和第一性原理理论研究，我们表征了在Si(111)表面生长的In链中拓扑孤子的精确原子结构。对孤子群的变温测量使我们能够确定孤子形成能约为 60 meV，小于带隙 ∼200 meV 的二分之一。一旦产生，这些孤子的迁移率非常低，尽管激活能仅为约 20 meV；缓慢的性质归因于孤子迁移的尝试频率极低。我们进一步证明了局域电场增强的孤子动力学。
Based on scanning tunneling microscopy and first-principles theoretical studies, we characterize the precise atomic structure of a topological soliton in In chains grown on Si(111) surfaces. Variable-temperature measurements of the soliton population allow us to determine the soliton formation energy to be ∼60 meV, smaller than one-half of the band gap of ∼200 meV. Once created, these solitons have very low mobility, even though the activation energy is only about 20 meV; the sluggish nature is attributed to the exceptionally low attempt frequency for soliton migration. We further demonstrate local electric field-enhanced soliton dynamics.