High responsivity SiGe heterojunction phototransistor on silicon photonics platform.
High responsivity SiGe heterojunction phototransistor on silicon photonics platform.
复制标题
硅光子平台上的高响应度 SiGe 异质结光电晶体管。
作者：
V. Sorianello;G. De Angelis;A. De Iacovo;L. Colace;S. Faralli;M. Romagnoli
我们报道了一种新型的近红外硅锗光电晶体管制造的标准硅光子学铸造。该设备首先通过模拟研究。所制造的器件的特征在于在不同的光功率的电流-电压特性。典型的光电晶体管在5V和1V偏压下，在低光功率下的记录响应度分别超过232 A/W和42 A/W。还提出了一种差分检测方案，用于暗电流消除，以显着提高器件的灵敏度。
We report on a novel near infrared SiGe phototransistor fabricated by a standard silicon photonics foundry. The device is first investigated by simulations. The fabricated devices are characterized in terms of current-voltage characteristics at different optical power. Typical phototransistors exhibit 1.55µm record responsivity at low optical power exceeding 232A/W and 42A/W at 5V and 1V bias, respectively. A differential detection scheme is also proposed for the dark current cancellation to significantly increase the device sensitivity.