Time of flight experimental studies of CdZnTe radiation detectors
Time of flight experimental studies of CdZnTe radiation detectors
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DOI：
10.1007/s11664-000-0208-z
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发表时间：
2000-06-01
影响因子：
2.1
通讯作者：
Greaves, M
中科院分区：
文献类型：
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作者：
Erickson, JC;Yao, HW;Greaves, M
用飞行时间技术研究了CZT(CZT)和CdTe辐射探测器的载流子捕获时间tau和迁移率u。由氮气泵浦的脉冲染料激光器在探测器表面附近产生载流子，波长类似于500 nm。产生的电子或空穴的信号由快速示波器测量，并进行分析以确定捕获时间和载流子的迁移率。在293K和138K之间，电子迁移率分别在1200 cm(2)/vs到2400 cm(2)/vs之间随温度变化。在室温下，各种CZT探测器的电子迁移率在900 cm(2)/vs到1350 cm(2)/vs之间。在室温下观察到各种不同的CdTe探测器的电子迁移率在740 cm(2)/vs到1260 cm(2)/vs之间。计算出CZT和CdTe的平均电子迁移率分别为1120 cm(2)/vs和945 cm(2)/vs。CZT和CdTe中的空穴迁移率都在27 cm(2)/vs到66 cm(2)/vs之间变化。CZT的室温电子陷阱时间在1.6亩S到4.18亩S之间变化，平均值约为2.5亩S，而CdTe的室温电子陷阱时间在1.7亩S到4.15亩S之间变化，平均值约为3.1亩S。
A time of flight technique was used to study the carrier trapping time, tau, and mobility, mu, in CdZnTe (CZT) and CdTe radiation detectors. Carriers were generated near the surface of the detector by a nitrogen-pumped pulsed dye laser with wavelength similar to 500 nm. Signals from generated electrons or holes were measured by a fast oscilloscope and analyzed to determine the trapping time and mobility of carriers. Electron mobility was observed to change with temperature from 1200 cm(2)/Vs to 2400 cm(2)/Vs between 293 K and 138 K, respectively. Electron mobilities were observed between 900 cm(2)/Vs and 1350 cm(2)/Vs at room temperature for various CZT detectors. Electron mobilities in various CdTe detectors at room temperature were observed between 740 cm(2)/Vs and 1260 cm(2)/Vs. Average electron mobility was calculated to be 1120 cm(2)/Vs and 945 cm(2)/Vs for CZT and CdTe, respectively. Hole mobilities in both CZT and CdTe were found to vary between 27 cm(2)/Vs and 66 cm(2)/Vs. Electron trapping times in CZT at room temperature varied from 1.60 mu s to 4.18 mu s with an average value of about 2.5 mu s. Electron trapping time in CdTe at room temperature varied between 1.7 mu s and 4.15 mu s with an average value of about 3.1 mu s.