Self-Assembled Quasi-3D Nanocomposite: A Novel p-Type Hole Transport Layer for High Performance Inverted Organic Solar Cells
Self-Assembled Quasi-3D Nanocomposite: A Novel p-Type Hole Transport Layer for High Performance Inverted Organic Solar Cells
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DOI：
10.1002/adfm.201706403
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发表时间：
2018-04-11
影响因子：
19
通讯作者：
Choy, Wallace C. H.
中科院分区：
文献类型：
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作者：
Cheng, Jiaqi;Zhang, Hong;Choy, Wallace C. H.
空穴传输层（HTL）是实现高性能溶液处理光电子学（包括有机电子学）的关键。对于有机太阳能电池（OSC），倒置结构已被广泛采用以实现长期稳定性。然而，对于倒置的OSC，在有机活性层顶部上的p型有效HTL（下文称为顶部HTL）的研究有限。目前，p型顶部HTL主要是2D材料，其具有固有的垂直传导限制并且太薄而不能用作大面积光电应用的实际HTL。在本研究中，一种新型的自组装准三维纳米复合材料被证明是一个p型顶部HTL。值得注意的是，与2D对应物相比，新型HTL实现了约15倍的导电性增强和约16倍的延伸厚度。通过将这种新型HTL应用于覆盖富勒烯和非富勒烯系统的倒置OSC中，器件性能得到显著改善。冠军功率转换效率达到12.13%，这是溶液处理的基于HTL的倒置OSC的最高报告性能。此外，与传统器件相比，OSC的稳定性显著增强。这项工作不仅有助于发展高稳定性和大规模的OSC的实际应用，但也多样化的策略，以提高器件的性能。
Hole transport layer (HTL) plays a critical role for achieving high performance solution-processed optoelectronics including organic electronics. For organic solar cells (OSCs), the inverted structure has been widely adopted to achieve prolonged stability. However, there are limited studies of p-type effective HTL on top of the organic active layer (hereafter named as top HTL) for inverted OSCs. Currently, p-type top HTLs are mainly 2D materials, which have an intrinsic vertical conduction limitation and are too thin to function as practical HTL for large area optoelectronic applications. In the present study, a novel self-assembled quasi-3D nanocomposite is demonstrated as a p-type top HTL. Remarkably, the novel HTL achieves approximate to 15 times enhanced conductivity and approximate to 16 times extended thickness compared to the 2D counterpart. By applying this novel HTL in inverted OSCs covering fullerene and non-fullerene systems, device performance is significantly improved. The champion power conversion efficiency reaches 12.13%, which is the highest reported performance of solution processed HTL based inverted OSCs. Furthermore, the stability of OSCs is dramatically enhanced compared with conventional devices. The work contributes to not only evolving the highly stable and large scale OSCs for practical applications but also diversifying the strategies to improve device performance.