High-speed Growth and Characterization of Polycrystalline AlN Layers by High Temperature Chemical Vapor Deposition (HTCVD)
High-speed Growth and Characterization of Polycrystalline AlN Layers by High Temperature Chemical Vapor Deposition (HTCVD)
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高温化学气相沉积 (HTCVD) 多晶 AlN 层的高速生长和表征
DOI：
10.1149/1.3207607
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发表时间：
2009
影响因子：
1.1
通讯作者：
M. Pons
中科院分区：
文献类型：
--
作者：
A. Claudel;E. Blanquet;D. Chaussende;Rachel D. Martin;D. Pique;M. Pons
HTCVD装置由在低压下工作的自制垂直冷壁反应器中通过感应加热的石墨感受器组成[1-3]。所使用的前体是氨NH3和氯化铝AlClx物种通过Cl 2与高纯Al丝反应原位形成。AlN薄膜在1200 - 1600°C之间沉积在直径为55 mm的石墨基座上（图1）。研究了沉积温度对薄膜生长速率、表面形貌、晶粒尺寸和结晶状态的影响。在1600°C时，生长速率可达250 μm.h。
The HTCVD set-up consists of a graphite susceptor heated by induction in a home-built vertical cold-wall reactor working at low pressure [1-3]. The precursors used are ammonia NH3 and aluminium chlorides AlClx species formed in situ via Cl2 reaction with high purity Al wire. AlN films were deposited on 55 mm diameter graphite susceptor between 1200 and 1600°C (Figure 1). The influence of deposition temperature on growth rate, surface morphology, grain size and crystalline state is presented. Growth rates of up to 250 μm.h were reached at 1600°C.