Bismuth a New Surfactant or Contact for GaN Films Grown by Molecular Beam Epitaxy
Bismuth a New Surfactant or Contact for GaN Films Grown by Molecular Beam Epitaxy
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铋是一种新型表面活性剂或用于分子束外延生长 GaN 薄膜的接触剂
DOI：
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发表时间：
2002
期刊：
影响因子：
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通讯作者：
I. Harrison
中科院分区：
文献类型：
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作者：
C. T. Foxon;S. Novikov;Tian Li;R. Campion;A. J. Winser;I. Harrison
研究了生长过程中外加铋助剂对等离子体辅助分子束外延生长GaN薄膜性能的影响。已经使用了很大范围的铋熔剂，在最高的铋熔剂比镓的熔剂大。X射线和光致发光研究表明，在∼800°C下生长的GaN薄膜的结构质量和光学性质几乎没有变化。X射线和俄歇研究表明，在∼温度为800℃时生长的薄膜中铋的浓度很小。我们已经证明，通过降低沉积温度，可以在外延后的GaN薄膜上原位外延生长导电的金属铋薄膜。因此，铋有可能成为与GaN层和器件结构进行原位接触的新材料。
We have investigated the influence of an additional bismuth flux during growth on the properties of GaN films prepared by plasma‐assisted molecular beam epitaxy. A wide range of bismuth fluxes have been used, at the highest Bi flux this was larger than the flux of Ga. X‐ray and photoluminescence studies demonstrate that the structural quality and optical properties of the GaN films grown at ∼800 °C are practically unchanged. X‐ray and Auger studies indicated that the concentration of Bi in the bulk of the films grown at ∼800 °C is rather small. We have demonstrated that it is possible to grow conductive metallic Bi films epitaxially onto GaN films in‐situ after epitaxy by reducing the deposition temperature. Bismuth may thus potentially be a new material for in‐situ contacts to GaN layers and device structures.