Non-contact Metrology for mm-Wave and THz Electronics

Non-contact Metrology for mm-Wave and THz Electronics
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毫米波和太赫兹电子的非接触式计量

DOI:
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发表时间:
2019
期刊:
High-Frequency GaN Electronic Devices
影响因子:
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通讯作者:
G. Trichopoulos
G. Trichopoulos
中科院分区:
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文献类型:
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作者:
K. Sertel;G. Trichopoulos

文献摘要

被引文献

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我们提出了一种新的非接触式探测方法的高速器件和集成电路的晶圆上的计量。该新方法是在ONR DATE MURI下开发的,首次实现了晶圆上的非接触式多端口S参数测量。开发这种新方法的主要动机是最先进的接触式探针的固有问题,特别是对于毫米波和太赫兹频率的应用。随着工作频率的增加,接触探针尖端的间距必须保持较小,以避免辐射损失。因此,探针尖端需要高精度的微制造,使得它们在常规使用期间容易损坏。此外,探头定位和接触电阻的变化会阻碍测量的可重复性,这对于极高频应用至关重要。这里开发的非接触式探测系统通过将测试信号经由准光链路通过扩展的半球形聚焦透镜注入到测试晶片的共面波导环境上来避免与测试晶片的物理接触。优化的晶片上蝶形天线确保测试晶片内外的有效辐射耦合,准光链路在校准和测量期间保持固定。校准标准和晶片上的测试器件与准光链路对准,以在矢量网络分析仪上进行测量。此外,使用数字显微镜可以自动控制晶圆定位,实现前所未有的测量重复性。我们已经证明了我们的新方法,为90- 750 GHz频段的单端双端口CPW环境。使用修改后的蝶形巴伦天线,我们的方法也使,第一次,纯差模特性高达1.1THz。本章总结了所提出的系统及其性能的各种晶圆测试方案。
We present a novel non-contact probing approach for on-wafer metrology of high-speed devices and integrated circuits. The new method has been developed under the ONR DATE MURI and enables, for the first time, contact-free multi-port S-parameter measurements on-wafer. The main motivation to develop this new method was the inherent issues in the state-of-the-art contact probes, particularly for the millimeter wave and terahertz frequency applications. As the operation frequency increases, the pitch of contact probe tips must be kept small to avoid radiation losses. As such, the probe tips require high precision micro-manufacturing, making them prone to damage during conventional use. Moreover, probe positioning and contact resistance variability hinder measurement repeatability, which is critical for extremely high-frequency applications. The non-contact probing system developed here avoids physical contact with the test wafer by injecting the test signals via a quasi-optical link through an extended hemispherical focusing lens onto the test wafer’s coplanar waveguide environment. Optimized on-wafer butterfly antennas ensure effective radiative coupling onto and out of the test wafer, and the quasi-optical link stays fixed during calibration and measurements. Calibration standards and the test devices on wafer are aligned with the quasi-optical link to conduct the measurements on a vector network analyzer. Furthermore, the control of wafer positioning can be automated using a digital microscope, enabling unprecedented measurement repeatability. We have demonstrated our new approach for 90–750GHz band for single-ended two-port CPW environments. Using modified butterfly baluntennas, our approach also enables, for the first time, pure differential-mode characterization up to 1.1THz. This chapter summarizes the proposed system and its performance for various on-wafer test scenarios.