Substitution of Zn in Earth‐Abundant Cu2ZnSn(S,Se)4 based thin film solar cells – A status review
Substitution of Zn in Earth‐Abundant Cu2ZnSn(S,Se)4 based thin film solar cells – A status review
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DOI：
10.1016/j.solmat.2018.05.003
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发表时间：
2018-10
影响因子：
6.9
通讯作者：
M. S. Kumar;Sreejith P. Madhusudanan;Sudip Kumar Batabyal
中科院分区：
文献类型：
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作者：
M. S. Kumar;Sreejith P. Madhusudanan;Sudip Kumar Batabyal
Cu2ZnSnS4（CZTS）和Cu2ZnSn(S,Se)4（CZTSSe）是薄膜太阳能电池中最有前途的富季稀土光吸收材料，据报道其功率转换效率（PCE）超过12%。在基于CZTS和CZTSSe的太阳能电池中，相似的Cu和Zn原子尺寸被认为是CuZnand ZnCuantisite缺陷形成的主要原因，导致严重的电位波动和尾部状态，可以通过加入其他更大的原子（如Cd和Mn）来抑制。此外，由于kesterite晶体中存在Cu和Zn阳离子无序，在CZTS和CZTSe器件中观察到较大的开路电压亏缺。近年来，在CZTS基薄膜太阳能电池的发展中，利用阳离子取代来减少对位缺陷受到了广泛的关注。这也为探索具有与CZTS/CZTSSe相似晶体结构和带隙的材料开辟了可能性，例如Cu2XSnS4（其中X = Mn, Cd, Fe, Co， Ni和Ba）。本文讨论了用其他金属取代Zn对吸收材料的影响，为改变CZTS/CZTSSe薄膜太阳能电池吸收材料中的缺陷和尾态提供了一种方法。
Cu2ZnSnS4(CZTS) and Cu2ZnSn(S,Se)4(CZTSSe) are the most promising quaternary earth abundant photo-absorber materials for thin film solar cells, with reported power conversion efficiencies (PCE) of more than 12%. In CZTS and CZTSSe based solar cells, similar atomic sizes of Cu and Zn is thought to be the main reason for CuZnand ZnCuantisite defect formation, resulted in severe potential fluctuations and tail states that can be inhibited by an incorporation of alternative bigger atoms such as Cd and Mn. In addition, the large open-circuit voltage deficit observed in CZTS and CZTSe device because of existence of Cu and Zn cation disorder in kesterite crystal. Recently, in the development of CZTS based thin film solar cells the reduction of antisite defects by cation substitution has received considerable attention. This also opens up the possibility to explore materials with similar crystal structures and band gaps as CZTS/CZTSSe such as Cu2XSnS4(where X = Mn, Cd, Fe, Co, Ni and Ba). In this review, the effect of substituting other metals for Zn is discussed, providing a way to alter defects and tail states in the absorber material of CZTS/CZTSSe thin film solar cells.