High switching uniformity and 50 fJ/bit energy consumption achieved in amorphous silicon-based memristive device with an AgInSbTe buffer layer
High switching uniformity and 50 fJ/bit energy consumption achieved in amorphous silicon-based memristive device with an AgInSbTe buffer layer
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具有 AgInSbTe 缓冲层的非晶硅基忆阻器件实现了高开关均匀性和 50 fJ/bit 能耗
DOI：
10.1063/5.0053470
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发表时间：
2021-07
影响因子：
4
通讯作者：
Yichun Liu
中科院分区：
文献类型：
--
作者：
Yanyun Ren;Xiaojing Fu;Zhi Yang;Ruoyao Sun;Ya Lin;Xiaoning Zhao;Zhongqiang Wang;Haiyang Xu;Yichun Liu
在这项工作中，我们证明了高开关均匀性和50 fJ/位的能量消耗在非晶硅为基础的电阻开关（RS）设备通过插入AgInSbTe（AIST）层之间的硅绝缘层和银顶部电极。改进的RS性能归因于Ag离子储层的引入，其有助于抑制导电细丝的过度生长。在插入AIST层之后，低/高电阻状态的累积概率分别从176.8%/46.2%降低到3.1%/11.9%。促进Ag溶解的优点使得能够实现快速的开关速度（<50 ns）和低的设置电压（± 70 mV），这使得我们的器件具有低能耗（± 50 fJ/bit）。此外，我们的双层RS器件的设置/复位的多步分析模型的基础上的银离子基导电丝的形成和溶解。我们的工作提出了一种有效的方法，获得高性能的硅基存储器的实际应用。
In this work, we demonstrated the high switching uniformity and 50 fJ/bit energy consumption in an amorphous silicon-based resistive switching (RS) device by inserting the AgInSbTe (AIST) layer between the silicon insulating layer and Ag top electrodes. The improved RS performance is attributed to the introduction of an Ag ion reservoir layer, which helps to suppress conducting filament overgrowth. After insertion of the AIST layer, the cumulative probability of low/high resistance states decreased from 176.8%/46.2% to 3.1%/11.9%, respectively. The advantages of promoting Ag dissolution enable the realization of fast switching speed (<50 ns) and low set voltage (∼70 mV), which gives our device low energy consumption (∼50 fJ/bit). Moreover, the multi-step of set/reset analytical model of our dual-layer RS device was developed based on the formation and dissolution of the Ag-ion-based conductive filaments. Our work presents an effective method for obtaining high-performance Si-based memory for practical applications.