Short-wave infrared organic phototransistors with strong infrared-absorbing polytriarylamine by electron-transfer doping

Short-wave infrared organic phototransistors with strong infrared-absorbing polytriarylamine by electron-transfer doping
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DOI:
10.1038/s41528-021-00105-z
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发表时间:
2021-04-12
影响因子:
14.6
通讯作者:
Kim, Youngkyoo
Kim, Youngkyoo
中科院分区:
材料科学1区
文献类型:
--
作者:
Lee, Chulyeon;Kim, Hwajeong;Kim, Youngkyoo

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短波红外(SWIR)传感器在包括生物医学和信息技术领域在内的各种科学和工业应用中的必要性日益增加,因此引起了人们的极大关注。由于传统的SWIR传感器是由具有刚性和脆性的无机材料制成的,在柔性电子时代,柔性SWIR传感器需要具有离散SWIR吸收的有机材料。在这里,我们证明了一种聚三芳胺,聚[N,N‘-二(4-丁基苯基)-N,N’-二(苯基)联苯胺](PolyTPD),在三(五氟苯基)硼烷(BCF)掺杂48h后,可以吸收几乎全波长的SWIR(波长=1000-3200 nm)。光谱表征表明,在BCF掺杂的PolyTPD络合物中,电子从PolyTPD向BCF的转移产生了新的低能级(GAP)态,导致了SWIR吸收。采用BCF掺杂的PolyTPD薄膜作为栅敏层的有机光电三极管(OPTR)可以探测到波长为538 mA W-1(波长=1500 nm)、接近541 mA W-1(波长=2000 nm)和222 mA W-1(波长=3000 nm)的合理光响应度。目前的突破性SWIR-OPTR技术可以为SWIR吸收有机材料和柔性SWIR传感器的进一步发展铺平道路。
Short-wavelength infrared (SWIR) sensors have attracted keen attention due to the increasing necessity in a variety of scientific and industrial applications, including biomedical and information technology fields. Because conventional SWIR sensors are made of inorganic materials with rigid and brittle characteristics, organic materials with a discrete SWIR absorption are required for flexible SWIR sensors in the flexible electronics era. Here, we demonstrate that a polytriarylamine, poly[N,N '-bis(4-butylphenyl)-N,N '-bis(phenyl)benzidine] (PolyTPD), can absorb almost full range of SWIR wavelength (lambda = 1000-3200 nm) after 48 h doping with tris(pentafluorophenyl)borane (BCF). The spectroscopic characterization disclosed that an electron transfer from PolyTPD to BCF created a new low energy level (gap) state leading to the SWIR absorption in the BCF-doped PolyTPD complexes. Organic phototransistors (OPTRs) with the BCF-doped PolyTPD films as a gate-sensing layer could detect the SWIR light with a reasonable photoresponsivity of similar to 538 mA W-1 (lambda = 1500 nm), similar to 541 mA W-1 (lambda = 2000 nm), and similar to 222 mA W-1 (lambda = 3000 nm). The present breakthrough SWIR-OPTR technology can pave a way for further advances in SWIR-absorbing organic materials and flexible SWIR sensors.