High material quality growth of AlInAsSb thin films on GaSb substrate by molecular beam epitaxy
High material quality growth of AlInAsSb thin films on GaSb substrate by molecular beam epitaxy
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DOI：
10.1088/1674-1056/28/2/028503
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发表时间：
2019
期刊：
影响因子：
--
通讯作者：
Niu Zhichuan
中科院分区：
文献类型：
--
作者：
Chang Faran;Hao Ruiting;Qi Tongtong;Zhao Qichen;Liu Xinxing;Li Yong;Gu Kang;Guo Jie;Wang Guowei;Xu Yingqiang;Niu Zhichuan
In this paper,high material quality Al0.4In0.6AsSb quaternary alloy on GaSb substrates is demonstrated.The quality of these epilayers is assessed using a high-resolution x-ray diffraction,Fourier transform infrared (FTIR) spectrometer,and atomic force microscope (AFM).The x-ray diffraction exhibits high order satellite peaks with a measured period of 31.06 A (theoretical value is 30.48 A),the mismatch between the GaSb substrate and AlInAsSb achieves~(-1)62 arcsec,and the root-mean square (RMS) roughness for typical material growths has achieved around 1.6 A over an area of 10 μm×10 μm.At room temperature,the photoluminescence (PL) spectrum shows a cutoff wavelength of 1.617 μm.
