The Electrical Properties of Bismuth Telluride
The Electrical Properties of Bismuth Telluride
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DOI：
10.1088/0370-1328/72/5/307
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发表时间：
1958-11
期刊：
影响因子：
--
通讯作者：
R. Mansfield;W. Williams
中科院分区：
文献类型：
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作者：
R. Mansfield;W. Williams
测量了从Bi2Te3熔化区切割的样品和单晶的电导率、霍尔系数、热电势和能斯特系数。电流方向平行于解理面，用垂直于解理面和平行于解理面的磁场测量了单晶的电磁场效应。对于其他样品，用垂直于解理面的磁场测量了霍尔系数和能斯特系数。温度范围为100°K到600°K，使用的是杂质含量变化很大的样品。外区热电势和电导率的分析表明，样品是部分简并的，当考虑到这一点时，迁移率的温度依赖关系为T-1.63(电子)和T-1.94(空穴)。在高温范围内，电导率测量得到了0°K为0.21 eV的能隙。非本征范围内霍尔系数随温度的变化是反常的，其原因尚不清楚。能斯特系数Q表现出半导体的一般行为，并且它服从一个可由莫罗关系导出的关系，Q与tRσd2E/Dt2成正比(温差电势=De/dt，霍尔系数=R，电导率=σ)。
Measurements of the electrical conductivity, Hall coefficient, thermoelectric power and Nernst coefficient on specimens cut from zone melted Bi2 Te3 and on a single crystal are described. The current flow was parallel to the cleavage planes and the galvanomagnetic effects of the single crystal were measured with the magnetic field perpendicular and parallel to the cleavage planes. For the other specimens the Hall and Nernst coefficients were measured with the magnetic field perpendicular to the cleavage planes. The temperature range was 100°K to 600°K and specimens with a wide variation of impurity content were used. Analysis of the thermoelectric power and conductivity in the extrinsic range indicated that the specimens were partially degenerate, and when allowance is made for this, the temperature dependence of mobility is T-1.63 for electrons and T-1.94 for holes. In the high temperature range the conductivity measurements yield a value of the energy gap at 0°K of 0.21 eV. The temperature dependence of the Hall coefficient in the extrinsic range is anomalous and the explanation is not known. The Nernst coefficient Q exhibits the general behaviour expected for a semiconductor, and it is shown that it obeys a relation which can be derived from Moreau's relation, Q being proportional to TRσd2E/dT2 (thermoelectric power = dE/dT, Hall coefficient = R, conductivity = σ).