Flexible high gain complementary inverter using n-ZnO and p -pentacene channels on polyethersulfone substrate
Flexible high gain complementary inverter using n-ZnO and p -pentacene channels on polyethersulfone substrate
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在聚醚砜基板上使用 n-ZnO 和 p-并五苯通道的灵活高增益互补逆变器
DOI：
10.1063/1.2956406
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发表时间：
2008
影响因子：
4
通讯作者：
S. Im
中科院分区：
文献类型：
--
作者：
M. Oh;Wonjun Choi;Kimoon Lee;D. Hwang;S. Im
我们报告了互补逆变器的制造，该逆变器在聚醚砜基板上以 ZnO 和并五苯作为 n 型和 p 型通道，在 7V 下运行。室温下在塑料上沉积图案化的 Al 和 AlOx 薄膜，分别作为公共栅电极和电介质。在控制 ZnO 沟道和 AlOx 电介质之间的初始栅极不稳定性后，我们的 n 型薄膜晶体管 (TFT) 显示出与 p 型 TFT 非常相似的漏极电流水平。即使在弯曲条件下（曲率半径为 56mm），我们的柔性互补器件也显示出 ∼100 的高电压增益。我们的互补逆变器还展示了 ∼20ms 的有前途的动态行为。
We report on the fabrication of complementary inverters that have ZnO and pentacene as n-type and p-type channels on a polyethersulfone substrate operating under 7V. Patterned Al and AlOx thin film were deposited at room temperature on the plastic as a common gate electrode and dielectric, respectively. After initial gate instability between ZnO channel and AlOx dielectric was controlled, our n-type thin-film transistors (TFTs) displayed quite a similar drain current level to that of p-type TFTs. Our flexible complementary device showed much high voltage gain of ∼100 even under a bent condition (56mm radius of curvature). Our complementary inverter also demonstrates a promising dynamic behavior of ∼20ms.