Polarization based charge density drain current and small-signal model for nano-scale AlInGaN/AlN/GaN HEMT devices
Polarization based charge density drain current and small-signal model for nano-scale AlInGaN/AlN/GaN HEMT devices
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DOI：
10.1016/j.spmi.2012.11.020
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发表时间：
2013-02
影响因子：
3.1
通讯作者：
D. Godwinraj;H. Pardeshi;Sudhansu Kumar Pati;N. Mohankumar;C. Sarkar
中科院分区：
文献类型：
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作者：
D. Godwinraj;H. Pardeshi;Sudhansu Kumar Pati;N. Mohankumar;C. Sarkar
