Antiferromagnetic skyrmion-based logic gates controlled by electric currents and fields
Antiferromagnetic skyrmion-based logic gates controlled by electric currents and fields
复制标题
由电流和场控制的基于反铁磁斯格明子的逻辑门
DOI：
10.1063/5.0056259
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发表时间：
2021-08-09
影响因子：
4
通讯作者：
Zhou, Yan
中科院分区：
文献类型：
--
作者：
Liang, Xue;Xia, Jing;Zhou, Yan
反铁磁物质因其独特的性质（包括零杂散场、抗外磁场的鲁棒性和超快动力学）而成为未来自旋电子应用的有前途的材料，近年来引起了广泛的兴趣。在这项工作中，我们首先研究了孤立的skyrmions在反铁磁纳米轨道与电压门控区域的动力学。结果表明，驱动电流和压控磁各向异性梯度可以共同控制Skyrmion。我们进一步提出了一种新的逻辑计算门设计的基础上操纵的反铁磁skyrmion，这是数值实现结合几个相互作用和现象，包括自旋霍尔效应，电压控制的磁各向异性效应，skyrmion-skyrmion相互作用，和skyrmion-edge相互作用。所提出的逻辑门可以执行逻辑AND、OR、NOT、NAND和NOR门的基本布尔运算。我们的研究结果可能是有用的设计未来的内存逻辑计算设备具有超低能耗和超高存储密度。
Antiferromagnets are promising materials for future spintronic applications due to their unique properties including zero stray fields, robustness versus external magnetic fields and ultrafast dynamics, which have attracted extensive interest in recent years. In this work, we first investigate the dynamics of isolated skyrmions in an antiferromagnetic nanotrack with a voltage-gated region. It is found that the skyrmion can be jointly controlled by the driving current and the voltage-controlled magnetic anisotropy gradient. We further propose a new design of logic computing gates based on the manipulation of antiferromagnetic skyrmions, which is numerically realized combining several interactions and phenomena, including the spin Hall effect, voltage-controlled magnetic anisotropy effect, skyrmion-skyrmion interaction, and skyrmion-edge interaction. The proposed logic gates can perform the basic Boolean operations of the logic AND, OR, NOT, NAND and NOR gates. Our results may be useful for designing future in-memory logic computing devices with ultra-low energy consumption and ultra-high storage density.