Strain and Electronic Nematicity in La2-xSrxCuO4
Strain and Electronic Nematicity in La2-xSrxCuO4
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DOI：
10.1007/s10948-019-05327-x
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发表时间：
2019-11
影响因子：
1.8
通讯作者：
A. Bollinger;Zebin Wu;Longlong Wu;Xi He;I. Drozdov;Jie Wu;I. Robinson;I. Božović
中科院分区：
文献类型：
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作者：
A. Bollinger;Zebin Wu;Longlong Wu;Xi He;I. Drozdov;Jie Wu;I. Robinson;I. Božović
在la2 - xsrxcuo4薄膜中，用角分辨横向电阻率法观察到了电子向向性，当薄膜生长在正交衬底上时，定向器的取向总是固定在晶体轴上，而当衬底是四边形时，定向器的取向则不是固定在晶体轴上。在这里，我们报告了在（四方）lasralo4上生长的薄膜的测量结果，并随后将其放置在允许单轴压缩应变应用的设备中。该装置施加足够的力使lasralo4产生1%的正交性，但在应变下的薄膜中，与未应变时相比，没有观察到电子向列性的变化。晶格效应很弱，向列性的起源主要是电子的。
Electronic nematicity has previously been observed in La2-xSrxCuO4thin films by the angle-resolved transverse resistivity method with a director whose orientation is always pinned to the crystal axes when the film is grown on an orthorhombic substrate but not when the substrate is tetragonal. Here we report on measurements of thin films grown on (tetragonal) LaSrAlO4and subsequently placed in an apparatus that allows the application of uniaxial compressive strain. The apparatus applied enough force to produce a 1% orthorhombicity in LaSrAlO4and yet no change in the electronic nematicity was observed in films under strain compared to when they were unstrained. The lattice effects are weak, and the origin of nematicity is primarily electronic.