Minority-carrier diffusion length in a GaN-based light-emitting diode
Minority-carrier diffusion length in a GaN-based light-emitting diode
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DOI：
10.1063/1.1400075
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发表时间：
2001-08
影响因子：
4
通讯作者：
Juan González;K. Bunker;P. Russell
中科院分区：
文献类型：
--
作者：
Juan González;K. Bunker;P. Russell
采用线扫描电子束感生电流技术测量了GaN基发光二极管中电子和空穴的少子扩散长度。一个理论模型与扩展的产生源和非零的表面复合速度被用来准确地提取的p-和n-型层的扩散长度。p型GaN层中电子的少子扩散长度Ln=（80±6）nm，n型GaN：Si，Zn有源层中空穴的少子扩散长度Lp=（70±4）nm，p型Al 0.1Ga 0.9N层中电子的少子扩散长度Ln=（55±4）nm。从这个模型的结果进行了比较，两个简单的和广泛使用的理论模型。
Minority-carrier diffusion lengths of electrons and holes were measured in a GaN-based light-emitting diode using the electron-beam-induced current technique in the line-scan configuration. A theoretical model with an extended generation source and a nonzero surface recombination velocity was used to accurately extract the diffusion length of the p- and n-type layers. A minority-carrier diffusion length of Ln=(80±6) nm for electrons in the p-type GaN layer, Lp=(70±4) nm for holes in the n-type GaN:Si,Zn active layer, and Ln=(55±4) nm for electrons in the p-type Al0.1Ga0.9N layer were determined. The results from this model are compared with two simpler and widely used theoretical models.