High Reflectivity p-Type Doped Distributed Bragg Reflectors Using ZnSe/MgS Superlattices
High Reflectivity p-Type Doped Distributed Bragg Reflectors Using ZnSe/MgS Superlattices
复制标题
使用 ZnSe/MgS 超晶格的高反射率 p 型掺杂分布式布拉格反射器
DOI：
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发表时间：
2002
期刊：
影响因子：
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通讯作者：
D. Hommel
中科院分区：
文献类型：
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作者：
C. Kruse;G. Alexe;M. Klude;H. Heinke;D. Hommel
采用分子束外延技术，以ZnSe为高折射率材料，ZnSe/MgS超晶格为低折射率材料，制备了未掺杂和p型掺杂的分布式布拉格反射器（DBR）。ZnSe/MgS SL由22.5个周期组成，周期长度为2.5 nm，这一点通过高分辨率X射线衍射测量得到证实。p型掺杂DBR在522 nm处的反射率大于99%。p型掺杂DBR的低温光致发光谱在2.686 eV处有一个强的施主-受主对复合峰。
Undoped and p-type doped distributed Bragg reflectors (DBRs) have been grown by molecular beam epitaxy using ZnSe layers for the high refractive index material and ZnSe/MgS superlattices (SLs) for the low index material. The ZnSe/MgS SLs consist of 22.5 periods with a period length of 2.5 nm as confirmed by high-resolution X-ray diffraction measurements. A reflectivity of the p-type doped DBR higher than 99% at 522 nm has been achieved. The low temperature photoluminescence spectrum of the p-type doped DBR shows a strong donor-acceptor pair recombination peak at 2.686 eV.