The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMT's
The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMT's
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DOI：
10.1109/55.843146
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发表时间：
2000-06-01
影响因子：
4.9
通讯作者：
Eastman, LF
中科院分区：
文献类型：
--
作者：
Green, BM;Chu, KK;Eastman, LF
未掺杂的AlGaN/GaN HEMT的表面钝化减少或消除了限制器件射频电流和击穿电压的表面效应。在2 × 125 × 0.5 μ m AlGaN/GaN蓝宝石HEMT上的功率测量表明，在每种情况下，当漏极施加15 V时，4 GHz饱和输出功率从1.0 W/mm（峰值功率增加效率（PAE）的36%）增加到2.0 W/mm（峰值PAE的46%）。击穿测量数据显示，在同一晶圆上，0.5 μ m栅极长度HEMT的击穿电压平均增加25%。最后，使用Si3N4钝化层处理的蓝宝石上2 × 75 × 0.4 μ m AlGaN/GaN HEMT的4 GHz功率扫描数据在41% PAE （25 V漏极偏置）下产生4.0 W/mm的饱和输出功率。该结果代表了未掺杂蓝宝石衬底的AlGaN/GaN HEMT的最高微波功率密度。
Surface passivation of undoped AlGaN/GaN HEMT's reduces or eliminates the surface effects responsible For limiting both the RF current and breakdown voltages of the devices. Power measurements on a 2 x 125 x 0.5 mu m AlGaN/GaN sapphire-based HEMT demonstrate an increase in 4 GHz saturated output power from 1.0 W/mm [36% peak power-added efficiency (PAE)] to 2.0 W/mm (46% peak PAE) with 15 V applied to the drain in each case. Breakdown measurement data show a 25% average increase in breakdown voltage for 0.5 mu m gate length HEMT's on the same wafer, Finally, 4 GHz power sweep data for a 2 x 75 x 0.4 mu m AlGaN/GaN HEMT on sapphire processed using the Si3N4 passivation layer produced 4.0 W/mm saturated output power at 41% PAE (25 V drain bias). This result represents the highest reported microwave power density for undoped sapphire substrated AlGaN/GaN HEMT's.