High-photosensitivity p-channel organic phototransistors based on a biphenyl end-capped fused bithiophene oligomer
High-photosensitivity p-channel organic phototransistors based on a biphenyl end-capped fused bithiophene oligomer
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DOI:
10.1063/1.1856144
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发表时间:
2005-01-24
影响因子:
4
通讯作者:
Shim, HK
中科院分区:
文献类型:
--
作者:
Noh, YY;Kim, DY;Shim, HK
We report highly photosensitive organic phototransistors (OPTs) based on a 2,5-bis-biphenyl-4-yl-thieno[3,2-b]thiophene (BPTT). The measured maximum sensitivity and the ratio of photocurrent to dark current (I-ph/I-dark) in BPTT OPTs were 82 A/W and 2.0x10(5) under 380 nm UV light with 1.55 mW/cm(2), respectively. The prepared OPTs show a photocurrent response similar to the absorption spectrum of BPTT. The major mechanisms for photocurrent amplification in this device were verified from experimental results as photovoltaic (turn-on) and photocurrent effect (turn-off) by a fitting to theoretic equations. (C) 2005 American Institute of Physics.