Band gap temperature-dependence of close-space sublimation grown Sb2Se3 by photo-reflectance
Band gap temperature-dependence of close-space sublimation grown Sb2Se3 by photo-reflectance
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DOI：
10.1063/1.5027157
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发表时间：
2018-08-01
期刊：
影响因子：
6.1
通讯作者：
Veal, Tim D.
中科院分区：
文献类型：
--
作者：
Birkett, Max;Linhart, Wojciech M.;Veal, Tim D.
采用近空间升华法制备了硒化锑Sb_2Se_3光伏吸收材料。结构，组成和形态进行了研究，通过X-射线衍射，扫描电子显微镜和能量色散光谱。大的类大黄的颗粒有利于光合作用自然发展。直接带隙的温度依赖性由20和320 K之间的光反射率确定，并且由Varshni和玻色-爱因斯坦关系很好地描述，随着温度从1.18到1.32 eV的降低而蓝移。300 K的带隙与高质量单晶材料中的带隙相匹配，而0 K的带隙与第一原理计算中发现的带隙一致，进一步支持了该材料的有益光伏特性。(C)2018年作者。
The candidate photovoltaic absorber antimony selenide Sb2Se3 has been prepared by the commercially attractive close-space sublimation method. Structure, composition, and morphology are studied by x-ray diffraction, scanning electron microscopy, and energy dispersive spectroscopy. Large rhubarb-like grains favorable for photovoltaics naturally develop. The temperature-dependence of the direct band gap is determined by photoreflectance between 20 and 320 K and is well described by the Varshni and Bose-Einstein relations, blue-shifting with decreasing temperature from 1.18 to 1.32 eV. The 300 K band gap matches that seen in high quality single-crystal material, while the 0 K gap is consistent with that found in first-principles calculations, further supporting the array of beneficial photovoltaic properties indicated for this material. (C) 2018 Author(s).