Superconductivity in the Doped Topological Insulator CuxBi2Se3 under High Pressure
Superconductivity in the Doped Topological Insulator CuxBi2Se3 under High Pressure
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DOI：
10.1103/physrevlett.108.057001
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发表时间：
2012-01-31
影响因子：
8.6
通讯作者：
de Visser, A.
中科院分区：
文献类型：
--
作者：
Bay, T. V.;Naka, T.;de Visser, A.
我们报道了拓扑超导体CuxBi 2Se 3的高压单晶研究。压力下的电阻率测量表明超导性被平滑地抑制。同时，金属性能逐渐丧失。压力下的上临界场数据B-c2（T）塌陷到通用曲线上。泡利极限的缺失和B-c2（T）与极化态函数的比较表明自旋三重态超导性，但各向异性自旋单重态不能完全丢弃。
We report a high-pressure single crystal study of the topological superconductor CuxBi2Se3. Resistivity measurements under pressure show superconductivity is depressed smoothly. At the same time the metallic behavior is gradually lost. The upper-critical field data B-c2(T) under pressure collapse onto a universal curve. The absence of Pauli limiting and the comparison of B-c2(T) to a polar-state function point to spin-triplet superconductivity, but an anisotropic spin-singlet state cannot be discarded completely.